CSAR 62 as negative-tone resist for high-contrast e-beam lithography at temperatures between 4 K and room temperature

摘要

The temperature dependence of the electron-beam sensitive resist CSAR 62 isinvestigated in its negative-tone regime. The writing temperatures span a widerange from 4 K to room temperature with the focus on the liquid heliumtemperature regime. The importance of low temperature studies is motivated bythe application of CSAR 62 for deterministic nanophotonic device processing bymeans of in-situ electron-beam lithography. At low temperature, CSAR 62exhibits a high contrast of 10.5 and a resolution of 49 nm. The etch stabilityis almost temperature independent and it is found that CSAR 62 does not sufferfrom peeling which limits the low temperature application of the standardelectron-beam resist PMMA. As such, CSAR 62 is a very promising negative-toneresist for in-situ electron-beam lithography of high quality nanostructures atlow temperature.